离子色谱法测定不同地区家庭饮用井水中的阴、阳离子

采用离子色谱法测定不同地区家庭饮用井水中氟离子、氯离子、硝酸根、硫酸根、钠离子、钾离子、镁离子和钙离子等8种阴、阳离子的含量。样品经IonPac AS11-HC型分离柱及IonPac AG11-HC型保护柱分离,以30mmol·L-1氢氧化钾溶液为淋洗液(阴离子分析);样品经IonPac CS12A型分离柱及IonPac CG12A型保护柱分离,以20 mmol·L-1甲基磺酸溶液为淋洗液(阳离子分析);采用电导检测器检测。8种离子在一定的质量浓度范围内与其峰面积呈线性关系,方法的检出限(3s)在0.002~0.034mg·L-1之间。对井水样品进行测定,测定值的相对标准偏差(n=6)在0.59%~2.0%之间。用标准加入法做方法的回收试验,计算得回收率在98.3%~109%之间。     

A facile and versatile protocol for the one-pot PhI(OAc)2 mediated divergent synthesis of quinazolines from 2-aminobenzylamine

In this present work iodobenzenediacetate (PIDA) has been found to be the key reagent in absence or presence of catalytic amount of molecular iodine (I₂)/zinc chloride (ZnCl₂) to construct quinazoline scaffold from 2-aminobenzylamine and a variety of easily available aldehydes, aryl and aliphatic amines, aliphatic and aryl alcohols and nitriles. This protocol provides mild and robust conditions along with great versatility to synthesize 2-substituted quinazolines from diverse starting materials in good to excellent yields. The developed protocol is also well applicable to reactants containing ease to oxidation prone functional groups.     

Well Oriented ZnO Nanorods Array: Negative Resistance and Optical Switching

Well‐oriented ZnO nanorods (NRs) arrays were grown on Si, alumina, quartz, and FTO substrates through a ZnO seed layer followed by low temperature wet chemical process. The influence of sputtered ZnO seed layer thickness (100, 50, 32, and 16 nm), annealing temperature and CuO_x coverage on the characteristics of ZnO NRs were investigated in this study. The crystalline structural, chemical, morphological, optical, and electrical properties of ZnO NRs arrays were studied by X‐ray diffraction (XRD), field emission‐ scanning electron microscopy equipped by energy dispersive X‐ray spectroscopy (FE‐SEM/EDX), Raman scattering, UV/Vis ‐ near IR absorption spectroscopy and current‐voltage characteristic. XRD and Raman spectra measurement revealed that the synthesize ZnO displayed hexagonal wurtzite structure. The individual rod diameter, density, and orientation can be controlled by varying the seed layer thickness. The mean diameter and maximum length of ZnO NRs are around 55–66 nm and 282 nm, respectively. ZnO NRs/ ZnO thin film structure shows optical switching and negative differential resistance behavior as applicable to ON/OFF gate and memory devices.     

On the stability of Timoshenko-type systems with internal frictional dampings and discrete time delays

In this paper, we consider a vibrating system of Timoshenko-type in a bounded one-dimensional domain under Dirichlet–Dirichlet or Dirichlet–Neumann boundary conditions with one or two discrete time delays and one or two internal frictional dampings. First, we show that the system is well posed in the sens of semigroup theory. Second, we prove the exponential stability regardless to the speeds of wave propagation of the system if the weights of the time delays are smaller than the ones of the corresponding dampings, respectively. However, when the weight of one time delay is not smaller than the one of the corresponding damping, we prove the exponential stability in case of equal-speed wave propagation, and the polynomial stability in the opposite case.     

Numerical study of a well boat operating at a fish farm in current

Dynamic response of a well boat operating at a fish farm in current is investigated numerically. An objective is to determine the operational conditions of the well boat. In terms of the fish farm, a realistic set-up (with single cage) is considered, including a floating collar, an elastic sinker tube, a flexible-closed net cage and a complex mooring system. A time-domain solution is used to find the steady configuration and response. Transverse viscous current loads are estimated using the cross-flow principle. The drag coefficients are obtained empirically by considering cross-sectional details, free surface and three-dimensional (3D) flow effects. The drag force is experimentally validated. The effect of the ship wake on the net loading is also assessed.The most critical scenario with the well boat placed at the weather side of the fish farm is analyzed in detail. Critical response variables for operational limits are the maximum anchor-line tensions and floater stresses. Numerical results show that the anchor loads will increase more than 40% in small current velocities and up to 90% in high current velocities due to the viscous current loads on the boat. There is also a strong increase of the floating collar deformations and stresses when the well boat is in contact with the floating collar.A sensitivity analysis has been carried out to identify the physical parameters affecting the anchor loads and the maximum stress in the floating collar. From our studies, the anchor loads are more sensitive to current direction, bottom weight system, sinker tube depth and mooring line properties (pretension load, anchor chain weight, etc.) and less sensitive to other parameters such as floating collar stiffness and cross-sectional drag coefficients of the well boat. The shading effect of the well boat on the fish-farm inflow has been examined and appeared not negligible with 4% to 10% reduction of the anchor loads for the studied current conditions. The maximum stress in the floating collar is sensitive to well-boat loads related parameters (current direction, cross-sectional drag coefficient) and pretension load in the anchor line; not so sensitive to net loading related parameters such as sinker tube depth and sinker tube weight.Lastly, the operational conditions of the well boat at the fish farm were discussed. Numerical results show that the maximum stresses in the floating collar should be of major concern. The loads in the mooring lines are moderate compared with the corresponding breaking limits.     

Highly selective molecular recognition and high throughput detection of melamine based on molecularly imprinted sol-gel film

Multimode reader has been generally applied in immunoassay, and in the proposed paper, the 96 well micro-plate was modified with molecularly imprinted melamine sol-gel film, based on which the highly selective and high throughput detection of melamine was achieved. Melamine was imprinted into silica sol-gel films directly using phenyltrimethoxysilane and methyltrimethoxysilane as functionalized organosilicon precursors. The binding characteristic of the imprinted film to melamine was evaluated by equilibrium binding experiments and the morphology was studied by scanning electronic microscope (SEM). Scatchard analysis was carried out to estimate the binding parameters of the imprinted film. The proposed method exhibited excellent selectivity because of specific recognition of MM by molecularly imprinted film. Under the optimum conditions, the chemiluminescence (CL) intensity had a linear relationship against the concentration of melamine over the range of 0.1-50 μg mL⁻¹ with a lower detection limit of 0.02 μg mL⁻¹.     

Quantales的代数余核和子Quantales

在研究代数余核的一些性质的基础上，得到了Quantales的映射构成代数余核的条件；同时证明了由wellinside关系生成的某种集是子Quantale．     

BCH-代数的原子与分支

在BCH—代数中引入了原子与分支的概念，给出了一个元素为BCH-代数原子的一系列等价条件，证明了一个BCH—代数的所有原子作成的集合是一个广义结合BCI—代数，最后对BCH—代数分支的性质进行了讨论。     

Anomalous capacitance of quantum well double-barrier diodes

The S-parameters of several different quantum well double barrier diodes have been measured. A technique has been developed for measuring whisker contacted diodes with and HP 8510B automatic network analyzer. Special coaxial mounts using K-connectors were designed to enable measurements up to 20 GHz. The voltage-dependent conductance and capacitance were derived from the measured reflection coefficient of each device. The C/V characteristics were observed to exhibit an anomalous increase at voltages corresponding the the negative differential resistance region (NDR). These are the first reported S-parameter measurements in the negative differential resistance region of quantum well double barrier diodes. A theory is presented that explains, in part, the observed results.     

LP—MOCVD研制InGaAs/InP应变量子阱LD

本文指出在LP-MOCVD生长过程中,采用量子阱有源区和上限制层不同的生长温度以及生长非掺杂过渡层等技术能有效地控制InGaAs/InP量子阱激光器的p-n结结位,给出了采用DEZn和H₂S做掺杂源在InP材料中p型和n型杂质溶度和p-n结控制的条件,并研制出有源区阱层InGaAs与InP存在0.5%压缩应变量子阱激光器,这一结构LD实现室温脉冲激射,得到峰值功率为106mW以上,阈值电流密度为2.6kA/cm².